 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SA1759 Transistors High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (-400V, -0.1A) 2SA1759 Features 1) High breakdown voltage. (BVCEO = -400V) 2) Low saturation voltage, typically VCE (sat)= -0.2V at IC / IB = -20mA / -2mA. 3) High switching speed, typically tf = 1s at Ic =100mA. 4) Wide SOA (safe operating area). 5) Complements the 2SA4505. External dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 (1)Base (2)Collector (3)Emitter Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -400 -400 -7 -0.1 -0.2 0.5 Unit V V V A(DC) A(Pulse) W 1 2 2 150 -55 to +150 C C 1 Single pulse, Pw=100ms 2 When mounted on a 40x40x0.7 mm ceramic board. Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob ton tstg tf Min. -400 -400 -7 - - - - 82 - - - - - Typ. - - - - - -0.2 - - 12 13 0.7 1.8 1 Max. - - - -10 -10 -0.5 -1.5 180 - - - - - Unit V V V A A V V - MHz pF s s s IC= -50A IC= -1mA IE= -50A VCB= -400V VEB= -6V IC= -20mA, IB= -2mA IC= -20mA, IB= -2mA VCE= -10V , IC= -10mA VCE= -10V , IE=10mA , f=5MHz VCB= -10V , IE=0A , f=1MHz IC= -100mA RL=1.5k IB1= -IB2= -10mA VCC~ -150V Conditions Rev.A 1/3 2SA1759 Transistors Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 2SA1759 MPT3 P AH T100 3000 Denotes hFE Electrical characteristics (Ta=25C) -100 A Ta=25C COLLECTOR CURRENT : IC (mA) -100 Ta=25C COLLECTOR CURRENT : IC (mA) -80 -3.5mA -4.5mA -4mA COLLECTOR CURRENT : IC (mA) -1 m -0.9mA -200 VCE=-5V -0.8mA -0.7mA -0.6mA -100 -50 -20 -10 -5 -2 -1 -0.5 Ta=100 C 25C -25C -80 -5mA -60 A -3m A m -2.5 -40 -2mA mA -1.5 -1mA A -0.5m -60 -0.5mA -0.4mA -0.3mA -40 -20 IB=0 -20 -0.2mA IB=-0.1mA 0 0 1 2 3 4 5 0 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Ground emitter output characteristics ( ) Fig.2 Ground emitter output characteristics ( ) Fig.3 Ground emitter propagation characteristis 1000 500 DC CURRENT GAIN : hEF Ta=25C 1000 500 DC CURRENT GAIN : hEF VCE=-10V Ta=100C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -10 -5 -2 -1 -0.5 IC/IB=20 Ta=25C 200 100 50 20 10 5 2 1 -0.5 -1 VCE=-10V 200 100 50 20 10 5 2 25C 5V -25C -0.2 -0.1 -0.05 -0.02 -0.01 -0.5 -1 10 -2 -5 -10 -20 -50 -100 -200 1 -0.5 -1 -2 -5 -10 -20 -50 -100 -200 -2 -5 -10 -20 -50 -100 -200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs.collector current ( ) Fig.5 DC current gain vs.collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE :VCE(sat) (V) BASE SATURATION VOLTAGE :VBE(sat) (V) -10 -5 -2 -1 -0.5 25C 100C Ta=-25C COLLECTOR OUTPUT CAPACITANCE : Cob (pF) IC/IB=10V 1000 TRANSITION FREQUENCY : fT (MHz) 500 200 100 50 20 10 5 2 Ta=25C VCE=-10V 1000 500 200 100 50 20 10 5 2 1 -0.05 -0.1 -0.2 Ta=25C f=1MHz IE=0A VBE(sat) -0.2 -0.1 -0.05 -0.02 -0.01 0.5 Ta=100C VCE(sat) 25C -25C 1 2 5 10 20 50 100 200 1 0.5 1 2 5 10 20 50 100 200 -0.5 -1 -2 -5 -10 -20 -50 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector-emitter saturation voltage Base-emitter saturation voltage vs. Collector current Fig.8 Gain bandwidth products vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Rev.A 2/3 2SA1759 Transistors TRANSIENT THERMAL RESISTANCE : Rth(C/W) -1000 100000 (1)When mounted on a 40x40x0.7mm ceramic board. (2)Unmounted COLLECTOR CURRENT : IC (mA) -500 -200 -100 -50 -20 -10 -5 Ta=25C (When mounted on a -2 40x40x0.7mm ceramic board) -1 Single nonrepetitive pulse Ic Max. (Pulse) Pw=10ms 10000 100ms DC 1000 100 (2) (1) 10 1 0.1 0.001 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 0.01 0.1 1 10 100 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) PULSE WIDTH : Pw (s) Fig.10 Safe operating area Fig.11 Transient thermal resistance RL=1.5k Base current waveform IB2 IB2 TUT VCC=-150V Collector current waveform 10% IC 90% VBB ton tstg tf Fig.12 Switching characteristics mesurement circuits Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
Price & Availability of 2SA1759
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |